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SiC discrete device

第三代1

FEATURES

• High voltage

• High temperature resistance

• High power density

PRODUCT PARAMETERS:

Product Name	Voltage	ID	RDS (on) @ Tj = 25°C	Package
NSNM120R040CN	1200V	60A	40mΩ	TO-247-4L
NSNM120R080CN	1200V	36A	80mΩ	TO-247-4L
NSNM120R160CN	1200V	17A	160mΩ	TO-247-3L

Product Name	Voltage	ID @ Tj = 150°C	Package
NSBD120A10CS	1200V	10A	TO-247-2L
SIC SBD 650V	650V	2-8A	DFN 88/56

PRODUCT DRAWING:

SiC分立器件3.png